Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry
Identifieur interne : 019E89 ( Main/Repository ); précédent : 019E88; suivant : 019E90Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry
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Abstract
The optical constants for thin layers of strained InAs, AlAs, and AlSb have been investigated by spectroscopic ellipsometry and multi-sample analyses. These materials are important for high-speed resonant tunneling diodes in the AlAs/InAs/In0.53Ga0.47As and AlSb/InAs material systems. Understanding the optical properties for these thin layers is important for developing in situ growth control using spectroscopic ellipsometry. Ex situ room-temperature measurements were made on multiple samples. The resulting fitted optical constants are interpreted as apparent values because they are dependent on the fit model and sample structure. These apparent optical constants for very thin layers can be dependent on thickness and surrounding material, and are generally applicable only for layers found in a similar structural context. The critical point features of optical constants for the strained layers and for the thin unstrained cap layers were found to differ from bulk values, and three principle effects (strain, quantum confinement, and thin-barrier critical-point broadening) have been identified as responsible. Of these three, the broadening of the E1 and E1+Δ1 critical points for thin barrier material is the newest and most pronounced. This thin barrier effect is shown to be a separate effect from strain, and is also observable for the AlAs/GaAs system. © 1996 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry</title><author><name sortKey="Herzinger, C M" uniqKey="Herzinger C">C. M. Herzinger</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nebraska</region></placeName><wicri:cityArea>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering University of Nebraska-Lincoln, Lincoln</wicri:cityArea></affiliation></author><author><name sortKey="Snyder, P G" uniqKey="Snyder P">P. G. Snyder</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Nebraska</region></placeName><wicri:cityArea>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering University of Nebraska-Lincoln, Lincoln</wicri:cityArea></affiliation></author><author><name sortKey="Celii, F G" uniqKey="Celii F">F. G. Celii</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Texas Instruments, Central Research Lab, Dallas, Texas 75265</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Texas Instruments, Central Research Lab, Dallas</wicri:cityArea></affiliation></author><author><name sortKey="Kao, Y" uniqKey="Kao Y">Y. Kao</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>Texas Instruments, Central Research Lab, Dallas, Texas 75265</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Texas</region></placeName><wicri:cityArea>Texas Instruments, Central Research Lab, Dallas</wicri:cityArea></affiliation></author><author><name sortKey="Chow, D" uniqKey="Chow D">D. Chow</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Hughes Research Laboratory, Malibu, California 90265</s1><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Hughes Research Laboratory, Malibu</wicri:cityArea></affiliation></author><author><name sortKey="Johs, B" uniqKey="Johs B">B. Johs</name><affiliation><inist:fA14 i1="04"><s1>J.A. Woollam Co., Lincoln, Nebraska, 68588</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14></affiliation></author><author><name sortKey="Woollam, J A" uniqKey="Woollam J">J. A. Woollam</name><affiliation><inist:fA14 i1="04"><s1>J.A. Woollam Co., Lincoln, Nebraska, 68588</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14></affiliation></author></titleStmt><publicationStmt><idno type="inist">97-0088551</idno><date when="1996-03-01">1996-03-01</date><idno type="stanalyst">PASCAL 97-0088551 AIP</idno><idno type="RBID">Pascal:97-0088551</idno><idno type="wicri:Area/Main/Corpus">019023</idno><idno type="wicri:Area/Main/Repository">019E89</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium antimonides</term><term>Aluminium arsenides</term><term>Critical points</term><term>Ellipsometry</term><term>Experimental study</term><term>Indium arsenides</term><term>Optical constants</term><term>Potential barrier</term><term>Strains</term><term>Thickness</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Aluminium antimoniure</term><term>Aluminium arséniure</term><term>Point critique</term><term>Ellipsométrie</term><term>Indium arséniure</term><term>Constante optique</term><term>Barrière potentiel</term><term>Déformation mécanique</term><term>Epaisseur</term><term>7820C</term><term>7866F</term><term>Etude expérimentale</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The optical constants for thin layers of strained InAs, AlAs, and AlSb have been investigated by spectroscopic ellipsometry and multi-sample analyses. These materials are important for high-speed resonant tunneling diodes in the AlAs/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As and AlSb/InAs material systems. Understanding the optical properties for these thin layers is important for developing in situ growth control using spectroscopic ellipsometry. Ex situ room-temperature measurements were made on multiple samples. The resulting fitted optical constants are interpreted as apparent values because they are dependent on the fit model and sample structure. These apparent optical constants for very thin layers can be dependent on thickness and surrounding material, and are generally applicable only for layers found in a similar structural context. The critical point features of optical constants for the strained layers and for the thin unstrained cap layers were found to differ from bulk values, and three principle effects (strain, quantum confinement, and thin-barrier critical-point broadening) have been identified as responsible. Of these three, the broadening of the E<sub>1</sub> and E<sub>1</sub>+Δ<sub>1</sub> critical points for thin barrier material is the newest and most pronounced. This thin barrier effect is shown to be a separate effect from strain, and is also observable for the AlAs/GaAs system. © 1996 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>79</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry</s1></fA08><fA11 i1="01" i2="1"><s1>HERZINGER (C. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>SNYDER (P. G.)</s1></fA11><fA11 i1="03" i2="1"><s1>CELII (F. G.)</s1></fA11><fA11 i1="04" i2="1"><s1>KAO (Y.)</s1></fA11><fA11 i1="05" i2="1"><s1>CHOW (D.)</s1></fA11><fA11 i1="06" i2="1"><s1>JOHS (B.)</s1></fA11><fA11 i1="07" i2="1"><s1>WOOLLAM (J. A.)</s1></fA11><fA14 i1="01"><s1>Center for Microelectronic and Optical Materials Research, and Department of Electrical Engineering University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ></fA14><fA14 i1="02"><s1>Texas Instruments, Central Research Lab, Dallas, Texas 75265</s1><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA14 i1="03"><s1>Hughes Research Laboratory, Malibu, California 90265</s1><sZ>5 aut.</sZ></fA14><fA14 i1="04"><s1>J.A. Woollam Co., Lincoln, Nebraska, 68588</s1><sZ>6 aut.</sZ><sZ>7 aut.</sZ></fA14><fA20><s1>2663-2674</s1></fA20><fA21><s1>1996-03-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 1997 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>97-0088551</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The optical constants for thin layers of strained InAs, AlAs, and AlSb have been investigated by spectroscopic ellipsometry and multi-sample analyses. These materials are important for high-speed resonant tunneling diodes in the AlAs/InAs/In<sub>0.53</sub>Ga<sub>0.47</sub>As and AlSb/InAs material systems. Understanding the optical properties for these thin layers is important for developing in situ growth control using spectroscopic ellipsometry. Ex situ room-temperature measurements were made on multiple samples. The resulting fitted optical constants are interpreted as apparent values because they are dependent on the fit model and sample structure. These apparent optical constants for very thin layers can be dependent on thickness and surrounding material, and are generally applicable only for layers found in a similar structural context. The critical point features of optical constants for the strained layers and for the thin unstrained cap layers were found to differ from bulk values, and three principle effects (strain, quantum confinement, and thin-barrier critical-point broadening) have been identified as responsible. Of these three, the broadening of the E<sub>1</sub> and E<sub>1</sub>+Δ<sub>1</sub> critical points for thin barrier material is the newest and most pronounced. This thin barrier effect is shown to be a separate effect from strain, and is also observable for the AlAs/GaAs system. © 1996 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70H20C</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H66F</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Aluminium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Aluminium antimonides</s0><s2>NK</s2></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Aluminium arséniure</s0><s2>NK</s2></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Aluminium arsenides</s0><s2>NK</s2></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Point critique</s0></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Critical points</s0></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Ellipsométrie</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Ellipsometry</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Indium arséniure</s0><s2>NK</s2></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Indium arsenides</s0><s2>NK</s2></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Constante optique</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Optical constants</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Barrière potentiel</s0></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Potential barrier</s0></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Déformation mécanique</s0></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Strains</s0></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Epaisseur</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Thickness</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>7820C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="11" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fN21><s1>229</s1></fN21><fN47 i1="01" i2="1"><s0>9704M00596</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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